Share on Facebook (opens in a new window) Share on X (opens in a new window) Share on Reddit (opens in a new window) Share on Hacker News (opens in a new window) Share on Flipboard (opens in a new ...

Macronix is releasing details of a new 3D NAND structure, called single-gate vertical channel (SGVC). The outfit will present a paper on the new tech at the 2017 IEEE International Electron Devices ...

New systems enable precision materials engineering in high-aspect-ratio 3D logic and memory chip structuresCentris™ Spectral™ SiN ALD leverages ...

Traditional planar NAND flash has had a long and illustrious run, but its time is over. Multiple manufacturers have announced they have no plans to pursue 2D NAND below the 15nm process node. Share on ...

Fresh innovations, such as molybdenum adoption, and advanced bonding architectures are emerging as key inflection points for ...

The part 1 of this two-article series outlined the NAND flash technology and how it transitioned from 2D to 3D NAND flash. The article also explained the current challenges in the way of density ...

Use left and right arrow keys to seek audio. NEO Semiconductor has announced that it has developed the "world's first 3D NAND-like DRAM cell array," which aims to increase DRAM chip density using ...

For several decades, NAND Flash has been the primary technology for low-cost and large-density data storage applications. This non-volatile memory is present in all major electronic end-use markets, ...

A virtual DOE-based process sensitivity check was performed for two tiers of channel holes in a 3D NAND device. The channel hole tilt distance, twist angle, and their sensitivities to the visible area ...

SAN JOSE, Calif.--(BUSINESS WIRE)--NEO Semiconductor™, the developer of innovative X-NAND™ architecture, today announced the company has been granted two U.S. patents under the title “Methods and ...