Phys.org

SRAM technology with 0.8V operation voltage

Hitachi, Ltd.and Renesas Technology Corp. announced that they have developed low-voltage embedded SRAM technology for SoC's (system-on-a-chip) beyond the 90-nm process node. Using new circuit ...
Design-Reuse

Renesas Technology Develops Promising Technology for Implementing On-Chip SOI SRAM of 32-Nanometer Generation and Beyond

Tokyo, June 12, 2007 −− Renesas Technology Corp. today announced the development of a technology that is effective in implementing SRAM in processes of the 32 nm (nanometer) generation and beyond, for ...
Phys.org

Toshiba Develops SRAM Circuit Technique that Secures Low Voltage Operation of System LSI

Toshiba Corporation today announced that it has developed a breakthrough technology that achieves low voltage operation of System LSI, opening the way to reduced power consumption in digital products.
Design-Reuse

Renesas Technology Develops Technique that Overcomes Effects of Threshold Variation to Stabilize the Operation of Embedded SRAM built with 65nm Process

High yield achieved for the world's smallest level 6-transistor SRAM memory-cell area (0.494µm 2) ; stabilization technique addresses variability of transistor characteristics. Tokyo, June 15, 2006 −− ...