Investing phenomenal sums in infrastructure that enables the production of SiC and GaN devices is the new norm. In this ...

Ams Osram has been nominated as one of three finalists for the 'German Future Award – Federal President's Award for ...

At EuMW 2024 in Paris (September 24 to 26, 2024), the Fraunhofer Institute for Applied Solid State Physics IAF will exhibit four low-noise InGaAs amplifiers (LNAs) that are onboard the European Space ...

Markets and Applications 2024 report', the SiC device market is projected to reach nearly $10 billion by 2029, with a ...

Canadian PIC firm POET Technologies has announced that Mentech Technology has selected its transmit and receive optical ...

-Ten Energy Frontier Research centres (EFRCs) designed to bring together world-class teams of scientists for groundbreaking ...

A European research and industry consortium led by semiconductor materials firm Soitec, has begun work to develop a future ...

Infineon Technologies has succeeded in developing the world’s first 300 mm power GaN wafer technology, claiming to be the ...

Miyake says that the team will now apply mist CVD to the fabrication of vertical GaN MOSFETs. Compound Semiconductor™ is an ...

Researchers at Fraunhofer for Applied Solid State Physics IAF have announced that they are coordinating a project to develop ...

TrendForce reports that global smartphone production experienced a 3 percent quarterly dip, totalling 286 million units in ...

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