Abstract: In this paper, we demonstrate that the lateral band-to-band tunneling component of gate-induced drain leakage (GIDL) leads to the formation of a parasitic bipolar junction transistor (BJT) ...
Abstract: An advanced series resistance model is developed to accurately predict source/drain (S/D) series resistance of complementary metal-oxide semiconductor (CMOS) in the nanometer regime. The ...
Trump Heads to UN Gathering Facing Billions in Unpaid Dues Man faces charges after laser pointed at Marine One with President Trump onboard NATO Shoots Down Russian Drones What the science says about ...